100-GHZ TRANSISTORS FROM WAFER-SCALE EPITAXIAL GRAPHENE PDF

The high carrier mobility of graphene has been exploited in field-effect transistors that operate at high frequencies. Transistors were fabricated on epitaxial graphene synthesized on the silicon face of a silicon carbide wafer, achieving a cutoff frequency of gigahertz for a gate length of nanometers. The high-frequency performance of these epitaxial graphene transistors exceeds that of state-of-the-art silicon transistors of the same gate length. This site needs JavaScript to work properly. Please enable it to take advantage of the complete set of features! Clipboard, Search History, and several other advanced features are temporarily unavailable.

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The high carrier mobility of graphene has been exploited in field-effect transistors that operate at high frequencies. Transistors were fabricated on epitaxial graphene synthesized on the silicon face of a silicon carbide wafer, achieving a cutoff frequency of gigahertz for a gate length of nanometers. The high-frequency performance of these epitaxial graphene transistors exceeds that of state-of-the-art silicon transistors of the same gate length.

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Similar articles Correlating Raman spectral signatures with carrier mobility in epitaxial graphene: a guide to achieving high mobility on the wafer scale. Robinson JA, et al. Nano Lett. PMID: Operation of graphene transistors at gigahertz frequencies. Lin YM, et al. Electro-oxidized epitaxial graphene channel field-effect transistors with single-walled carbon nanotube thin film gate electrode.

Ramesh P, et al. J Am Chem Soc. Self-aligned fabrication of graphene RF transistors with T-shaped gate. Badmaev A, et al. ACS Nano. Epub Mar Wafer-scale graphene integrated circuit. Show more similar articles See all similar articles. Armano A, et al. Nanomaterials Basel. Dong Q, et al. J Vib Acoust.

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100 GHz Transistors from Wafer Scale Epitaxial Graphene

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