DATASHEET 2N4401 PDF

Note: Complete Technical Details can be found in 2N datasheet attached in the bottom of the page. The maximum amount of current that could flow through the Collector pin is mA, hence we cannot connect loads that consume more than mA using this transistor. To bias a transistor we have to supply current to base pin, this current I B should be limited to 5mA. When this transistor is fully biased then it can allow a maximum of mA to flow across the collector and emitter.

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The UTC 2N is designed for use as a medium power. Order Number. Lead Free Plating. TO www. Pin Assignment. Tape Box. Collector-Base Voltage.

V CBO. Collector-Emitter Voltage. V CEO. Emitter-Base Voltage. V EBO. Collector Current-Continuous. I C mA. Total Device Dissipation. Derate above Junction Temperature. Storage Temperature. T STG. Note 1. These are steady state limits.

The factory should be consulted on applications involving pulsed or low duty. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.

Thermal Resistance, Junction to Ambient. Thermal Resistance, Junction to Case. Collector-Base Breakdown Voltage. Collector-Emitter Breakdown Voltage note. Emitter-Base Breakdown Voltage. Collector Cut-off Current. Base Cut-off Current. DC Current Gain. Collector-Emitter Saturation Voltage. Base-Emitter Saturation Voltage. BV CBO. BV CEO. BV EBO. I CEX. Current Gain Bandwidth Product. Collector-Base Capacitance. Emitter-Base Capacitance. Input Impedance. Voltage Feedback Ratio.

Small-Signal Current Gain. Output Admittance. Delay Time. Rise Time. Storage Time. Fall Time. Download 2N Datasheet. The factory should be consulted on applications involving pulsed or low duty cycle operations.

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