Numerous and frequently-updated resource results are available from this WorldCat. Examines the design, fabrication, and application of silicon heterostructure transistors. It covers topics including materials, transistor optimization, fabrication, devices, structural innovations, modeling, and simulation, and potential markets. Read more
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Numerous and frequently-updated resource results are available from this WorldCat. Examines the design, fabrication, and application of silicon heterostructure transistors. It covers topics including materials, transistor optimization, fabrication, devices, structural innovations, modeling, and simulation, and potential markets.
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Transistors bipolaires. Linked Data More info about Linked Data. WorldCat is the world's largest library catalog, helping you find library materials online. Remember me on this computer. Cancel Forgot your password? John D Cressler. Print book : English View all editions and formats. Transistors bipolaires -- Conception et construction. View all subjects. Similar Items. Contents Foreword; B. Cai and T. Ning Passive Components; J.
Joseph and J. Meister, H. Schafer, W. Perndl, and J. Chantre, M. Laurens, B. Szelag, H. Baudry, P. Chevalier, J. Mourier, G. Troillard, B. Martinet, M. Marty, and A. El-Kareh, S. Balster, P. Steinmann, and H. Colclaser and P. Home About Help Search.
Fabrication of SiGe HBT BiCMOS Technology - eBook
Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook , this volume examines the design, fabrication, and application of silicon heterostructure transistors. It has been carefully designed to provide a useful basis of comparison for the current status and future course of the global industry. In addition to the copious technical material and the numerous references contained in each chapter, the book includes easy-to-reference appendices on the properties of Si and Ge, the generalized Moll-Ross relations, integral charge-control relations, and sample SiGe HBT compact model parameters. Here at Walmart. Your email address will never be sold or distributed to a third party for any reason.
Fabrication of SiGe HBT BiCMOS technology