Dt Sheet. It also provides greater creepage distance between pins to meet the requirements of most safety specifications. Repetitive rating; pulse width limited by maximum junction temperature see fig. B, Mar www. B, Mar This datasheet is subject to change without notice.
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Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. It also provides greater creepage distance between pins to meet the requirements of most safety specifications. Notes a. Repetitive rating; pulse width limited by maximum junction temperature see fig. ISD 7. B, Mar www. This datasheet is subject to change without notice.
ISD controlled by duty factor D D. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. B, Sep DWG: Notes 1. Contour of slot optional.
Dimension D and E do not include mold flash. Mold flash shall not exceed 0. These dimensions are measured at the outermost extremes of the plastic body. Thermal pad contour optional with dimensions D1 and E1. Lead finish uncontrolled in L1. P to have a maximum draft angle of 1. Xian and Mingxin actually photo.
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Jump to Page. Search inside document. B, Mar This datasheet is subject to change without notice. Temperature Document Number: SRev. Drain-to-Source Voltage Fig. Gate-to-Source Voltage Fig. Case Temperature Fig. Drain Current Current regulator Same type as D. Document Number: SRev. Revision: Sep Document Number: 1 For technical questions, contact: hvm vishay. Revision: Oct Document Number: Hapeq Prons. Michael Liu. Igor Snjezana Doko.
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IRFPE50 MOSFET. Datasheet pdf. Equivalent
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